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BA157 THRU BA159
FAST SILICON RECTIFIERS Reverse Voltage - 400 to 1000 Volts Forward Current - 1.0 Ampere
Features *Low forward voltage *High current capability *Low leakage current *High surge capability *Low cost
Absolute Maximum Ratings (Ta = 25oC)
Symbol Repetitive Peak Reverse Voltage BA157 BA158 BA159
o
Value 400 600 1000 1
1)
Unit V V V A A
O O
VRRM VRRM VRRM Io
o
Average Rectified Current at Tamb=50 C Surge Forward Current, Half Cycle 50Hz, starting from Tj=25 C Junction Temperature Operating and Storage Temperature Range
1)
IFSM Tj TS
35 125 -65 to +125
C C
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/06/2003
BA157 THRU BA159
FAST SILICON RECTIFIERS
Characteristics at Tj=25oC
Symbol Forward Voltage at IF=1A, Tj=25oC Leakage Current at VRRM, Tamb=25oC Capacitance at f=1MHz ,VR=4V VR=4V VR=4V Reverse Recovery Time IF=10mA, IR=10mA IRR=1mA Reverse Recovery Time IF=0.5A, IR=1A IRR=0.25A BA157 BA158 BA159 BA157 BA158 BA159 BA157 BA158 BA159 Ctot Ctot Ctot trr trr trr trr trr trr RthA 15 15 15 300 300 500 150 150 250 251) pF pF pF ns ns ns ns ns ns K/W VF IR 1.3 5 V A Min. Typ. Max. Unit
Thermal Resistance Junction to Ambient Air
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/06/2003
BA157 THRU BA159
FAST SILICON RECTIFIERS
FIG.1-FORWARD CURRENT DERATING CURVE 1.0
AVERAGE FORWARD CURRENT AMPERES PEAK FORWARD CURRENT AMPERES
Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 35
0.8 0.6 0.4
25
TJ=55 C 8.3ms Single Half Sine-Wave
o
15
0.2
5
0 0 25 50 75 100 125 150 175
0 1 10 NUMBER OF CYCLES AT 60 Hz 100
AMBIENT TEMPERATURE, (o C)
Fig.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10
INSTANTANEOUS FORWARD CURRENT AMPERES
1
Tj=25 C Pulse Width=300 S 1% Duty Cycle
o
0.1
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE VOLTS
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/06/2003
BA157 THRU BA159
FAST SILICON RECTIFIERS
Fig.4- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
Fig.5- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE,pF
100
Tj=25 C f=1.0MHz Vsig=50mVp-p
o
10
TJ=100 oC
1
10
0.1
TJ=25 C
o
0.01 0 20 40 60 80 100
0 0.1 1 10 100 REVERSE VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE, C/W
100
o
10
1
0.1 0.01 0.1 1 10 100
t, PULSE DURATION,sec.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/06/2003

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